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| Transistor Small switching (60V, 2A) 2SK3065 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (2.5V) that is perfect for portable devices. 4) Easily designed drive circuits. 5) Easy to use in parallel. 6) Excellent resistance to damage from static electricity. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit FExternal dimensions (Units: mm) 178 Transistor FElectrical characteristics (Ta = 25_C) 2SK3065 FPackaging specifications FElectrical characteristic curves Fig.1 Total power dissipation vs. case temperature Fig.2 Maximum safe operating area Fig.3 Typical output characteristics 179 Transistor 2SK3065 Fig.4 Typical transfer characteristics Fig.5 Gate threshold voltage vs. channel temperature Fig.8 Static drain-source onstate resistance vs. gate-source voltage Fig.9 Static drain-source onstate resistance vs. channel temperature Fig.10 Forward transfer admittance vs. drain current 180 Transistor 2SK3065 Fig.13 Typical capacitance vs. drain-source voltage Fig.14 Switching characteristics (See Figures 17 and 18 for the measurement circuit and resultant waveforms) Fig.15 Reverse recovery time vs. reverse drain current Fig.16 Normarized transient thermal resistance vs. pulse width FSwitching characteristics measurement circuit 181 |
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